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Extra resources for Diamond-CVD
_.. _ _,_ . _. 6 Substrate Temperature Figures 5 and 8 show the influence of substrate temperature on growth rates of diamond in CVD. Clearly, a small change in the substrate temperature can alter the growth rates markedly, especially at higher gas pressures. This is attributable to the Arrhenius behavior of the deposition reactions. Moreover, in both low-temperature and high-temperature regimes, the growth rates are lower. I ’ l I I I t 900 I I I I 1100 T,OC Figure 8. om Elsevier Science Ltd. ) The optimum substrate temperature, at which a maximum diamond growth rate and a highest level of crystal perfection can be achieved for a given system, is generally in the range of SOO-lOOOT, with a typical low bound approaching 6OO”C, basically independent of deposition techniques.
Only a limited number of experiments have been conducted to achieve the homogeneous nucleation of diamond in the gas phase at atmospheric and subatmospheric pressures. However, there is evidence that, at least in some cases, diamond can be nucleated homogeneously in the gas phase 12181-[2211 Derjaguin and Fedoseevt25] presented theoretical arguments, based on classical nucleation theory, that homogeneous nucleation is possible. Matsumoto and Matsui suggested that hydrocarbon cage molecules such as adamantane, tetracyclododecane and hexacyclopentadecane are possible embryos for the homogeneous nucleation of diamond (Fig.
0 GENERAL CHARACTERISTICS PROCESSES OF DIAMOND CVD In spite ofthe differences between the various CVD methods developed so far, it is interesting to note that there exist many common points for these techniques, as summarized below. 1 Crystallite Morphology Single-crystal diamond can be grown epitaxially on a single-crystal diamond or cBN substrate, yet diamond thin films deposited on other nondiamond substrates in various CVD processes all exhibit a generally similar, polycrystalline morphology, consisting of randomly oriented crystals and containing a varying amount of non-diamond carbon and defects.